bulk silicon中文是什么意思

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中文翻譯
造句

矽制程

bulk n. 1.體積，容積，大小。 2.巨大；龐然大物；大塊； ...
silicon n. ＝ silicium
bulk n. 1.體積，容積，大小。 2.巨大；龐然大物；大塊；大批，大量。 3.貨艙；船貨；散裝貨物。 4.〔the bulk〕，大半，大部分，大多數(shù)；主體。 5.【物理學】脹量；松密度。 6.〔書面語〕身體；胖人，大塊頭；〔詩〕巨人，巨獸。 a ship of great bulk 體積龐大的船。 The bulk of it! 這東西真大!The bulk of the debt was paid. 大部分的債都還清了。 He lifted his huge bulk from the chair. 他那龐大的身軀從椅子上站起來。 bulk analysis 【化學】總分析。 bulk cargo 散裝貨。 break bulk 下貨，卸貨。 by bulk 估堆，按堆(計算等)。 in bulk 1. 不加包裝，散裝。 2. 大批，大量 (load in bulk 散裝入船，散運。 sell in bulk 原艙出售所裝運的貨，整批出售)。 vi. 1.顯得龐大；看上去重要。 2.增大，膨脹，脹大；堆積起來；形成大塊；擴展；(重要性等)增加。 3.(身體)發(fā)福。 The problem bulks large in his mind. 這個問題在他心目中顯得很重要。 vt. 1.使膨脹；使增大。 2.堆積(魚等)。 3.用眼力估計，毛估(重量、容量等)。 bulk large [small] in one's eyes [minds] 在某人眼[心目]中顯得巨大。 bulk up 1. 脹大。 2. 形成大數(shù)目。
bulk for bulk體積比; bulk體積對體積比,體積對比
by bulk 估堆
in bulk 成塊; 成批地,不散裝的; 大批，大量；散裝; 散裝,大批,大量來源; 散裝大宗貨; 散裝的
aluminium silicon 硅鋁合金
aluminum silicon 鋁硅合金
amorphous silicon 非晶硅; 無定形硅
calcium silicon 硅鈣合金; 硅化鈣; 矽化鈣
carbon silicon 碳化硅
carbonized silicon 碳貨硅，金剛砂
chrome-silicon 鉻硅
controllable silicon 可控硅
crystal silicon 結(jié)晶硅
crystalline silicon 晶體硅
cupro silicon 銅硅合金
cvd silicon 化學汽相淀積硅
czochralski silicon 切克勞斯基法生長硅
defective silicon 有缺陷硅
dendritic silicon 樹枝狀硅; 枝狀硅
doped silicon 摻雜硅
earth silicon 二氧化硅; 硅石
effect of silicon 硅的作用
eka silicon 準硅

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例句與用法

The corrosion rate of porous silicon in hf / h2o2 solution is several orders higher than that of bulk silicon
多孔硅在hf / h _ 2o _ 2溶液中的腐蝕速率比體硅的高幾個數(shù)量級。
Bulk silicon , with indirect band gap of 1 . 12 ev , does n ' t emit visible light at room temperature
本體硅為間接禁帶半導體，且禁帶寬度比較窄( 1 . 12ev ) ，在室溫下很難發(fā)可見光。
The mechanism of the luminescence has been discussed . bulk silicon , with indirect band gap of 1 . 12ev does n ' t emit light at room temperature
本體硅為間接禁帶半導體，且禁帶寬度較窄，室溫下很難發(fā)光。
With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
多孔硅改變了體硅的能帶結(jié)構(gòu)，使禁帶展寬，并由間接帶隙向直接帶隙轉(zhuǎn)變，實現(xiàn)了室溫發(fā)光。
With a broad and likely direct band gap , porous silicon has a different band structure from that of the bulk silicon . thus the porous silicon can emit visible light at room temperature
多孔硅改變了本體硅的能帶結(jié)構(gòu)，使禁帶寬度展寬，并由間接禁帶向直接禁帶轉(zhuǎn)變，實現(xiàn)了室溫發(fā)光。
A method to make blazed silicon gratings is designed . the fabrication of ( 100 ) and ( 111 ) silicon wafer grating is performed by bulk silicon techniques . the surfaces of silicon gratings have been tested by afm
設計了一種制作閃耀硅光柵的方法，利用體硅加工技術(shù)分別進行了( 100 )面硅片和( 111 )面硅片光柵的制作，對光柵的表面進行了測試。
The micromechanical comb - capacitive accelerometers fabricated by bulk silicon micromachining process are widely used for having simple process , small temperature coefficient , good stability and easily controllable damping coefficient
用體硅微機械工藝制作的梳齒電容式傳感器有制作工藝簡單、溫度系數(shù)小、穩(wěn)定性好、阻尼系數(shù)容易控制等優(yōu)點，因而應用廣泛。
In the dissertation , a micromechanical comb capacitive accelerometer having u - shaped supporting beams is designed , simulated and fabricated on the base of the anodic bonding between the silicon and glass , and bulk silicon micromachining process
而改用體硅微機械制作可以改善這些問題。本文設計、模擬并制作了一種基于硅一玻璃鍵合工藝的u型梁支撐的微機械電容式加速度計。
The different kinds of pyroelectric sensors were prepared on the porous silicon dioxide , plastic film and bulk silicon substrates respectively . the nanocomposite pclttp ( vdf - trfe ) film was deposited by spin - coating used as the sensing film , and ni - cr film was chosen as upper electrode and absorb layer
分別在多孔氧化硅、 pet塑料和硅襯底上，制備納米陶瓷/ p ( vdf - trfe )復合敏感膜的熱釋電單元傳感器。
In the new structure , a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process . . the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新結(jié)構(gòu)用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質(zhì)優(yōu)點，同時又具有pt - igbt中n ~ - ( n ~ + )雙層復合的薄耐壓層(即薄基區(qū))的優(yōu)點。

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